J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
Paper
P-i-n diodes for monolithic millimetre wave BiCMOS applications
Abstract
p-i-n diodes for millimetre wave applications were studied. The diodes were integrated into a BiCMOS technology, permitting monolithic millimetre wave circuits. The impact of process and layout variations on the insertion loss and isolation performance metrics was studied. Devices with an insertion loss of 1 dB and isolation of 17 dB at 60 GHz were obtained. © 2007 IOP Publishing Ltd.
Related
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
Ming L. Yu
Physical Review B
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP