L.G. Heller, L.M. Terman
IEEE JSSC
This paper summarizes the status and potential of charge coupled device (CCD) memories. Cost performance tradeoffs for serial memories are reviewed, and the CCD chip organizations for slow and fast access systems are discussed. Comparisons are made between CCD and MOS random access memory (RAM) chips on the basis of cell area, support circuits, cell operation, and technology.
L.G. Heller, L.M. Terman
IEEE JSSC
Christophe R. Tretz, C.T. Chuang, et al.
IEEE International SOI Conference 1998
L.M. Terman
IEEE Transactions on Magnetics
P. Pleshko, L.M. Terman
IEEE Transactions on Electronic Computers