PaperSilylation of resist materials using di- and polyfunctional organosilicon compoundsE. Babich, J. Paraszczak, et al.Microelectronic Engineering
PaperQuantum properties of surface space-charge layerssFrank StemC R C Critical Reviews in Solid State Sciences
Conference paperHigh-performance sub-0.08 μm CMOS with dual gate oxide and 9.7 ps inverter delayM. Hargrove, S.W. Crowder, et al.IEDM 1998