J.C. Tsang, J.E. Smith Jr., et al.
Physical Review B
Raman scattering and optical transmission measurements have been made on chemically vapor-deposited Si-rich SiO2 films. The measurements show segregated regions of amorphous silicon in the as-deposited films. Annealing the films at 1150°C completely crystallizes the amorphous silicon. Annealing at lower temperatures produces films with both amorphous and crystalline regions.
J.C. Tsang, J.E. Smith Jr., et al.
Physical Review B
T.N. Theis, D.J. Dimaria, et al.
Physical Review Letters
P.C. Arnett, D.J. Dimaria
Journal of Applied Physics
Subramanian S. Iyer, J.C. Tsang, et al.
Applied Physics Letters