Non-thermal effects in laser-enchanced etching of silicon by XeF2

F.A. Houle

doi:10.1016/0009-2614(83)80799-4

Chemical Physics Letters

Paper

18 Feb 1983

Non-thermal effects in laser-enchanced etching of silicon by XeF₂

View publication

Abstract

Mass spectrometric studies of the products of the reaction of XeF2 with silicon in the dark and under visible illumination have been carried out. The data show that photo-enchancement of the reaction is substantially different from thermal enchancement. It is proposed that photogenerated charge carries influence strongly both the overall etch rate and the reaction product distribution. © 1983.

Paper

Basic mechanisms in laser etching and deposition

F.A. Houle

Applied Physics A Solids and Surfaces

Paper

Electron impact fragmentation of gases by molecular beam mass spectrometry. Application to AsCl₃ and a GaCl₃/Ga₂ Cl₆ mixture

F.A. Houle

International Journal of Mass Spectrometry and Ion Processes

Paper

Deep-ultraviolet interferometric lithography as a tool for assessment nf chemically amplified photoresist performance

W.D. Hinsberg, F.A. Houle, et al.

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Conference paper

Sub-50 nm half-pitch imaging with a low activation energy chemically amplified photoresist

G.M. Wallraff, D. Medeiros, et al.

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

View all publications

Abstract

Related

Basic mechanisms in laser etching and deposition

Electron impact fragmentation of gases by molecular beam mass spectrometry. Application to AsCl3 and a GaCl3/Ga2 Cl6 mixture

Deep-ultraviolet interferometric lithography as a tool for assessment nf chemically amplified photoresist performance

Sub-50 nm half-pitch imaging with a low activation energy chemically amplified photoresist

Electron impact fragmentation of gases by molecular beam mass spectrometry. Application to AsCl₃ and a GaCl₃/Ga₂ Cl₆ mixture