Conference paper
Breakdown measurements of ultra-thin SiO2 at low voltage
J.H. Stathis, A. Vayshenker, et al.
VLSI Technology 2000
Paper
Non-Arrhenius temperature dependence of reliability in ultrathin silicon dioxide films
Abstract
A study was conducted to show that defect generation in ultrathin oxides (≲3.0 nm) operating above 100 °C will be enhanced compared to thicker films. Assumptions of an Arrhenius-type behavior from 25 °C to 200 °C on these ultrathin oxides are not justified and will likely lead to erroneous predictions for oxide reliability.