L.C. Wang, B. Zhang, et al.
Journal of Materials Research
A non-alloyed ohmic contact to n-type GaAs has been demonstrated. The technique of solid phase epitaxy through a transport medium has been used to obtain a metal/Ge(n+, epi)/GaAs(n, 〈100〉) heterostructure. The resulting contact displays a smooth surface and low contact resistivity (∼10-6-10-5 Ω cm 2) when compared with standard Au-Ge contacts on n-GaAs with similar doping concentrations (∼1018/cm3).
L.C. Wang, B. Zhang, et al.
Journal of Materials Research
A.C. Callegari, D.K. Sadana, et al.
Applied Physics Letters
E.D. Marshall, B. Zhang, et al.
Journal of Applied Physics
C.C. Han, X.Z. Wang, et al.
Journal of Applied Physics