Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
We observe a strong correlation between changes in the density of paramagnetic silicon-dangling-bond centers and changes in the space-charge density in amorphous silicon nitride films subjected alternately to positive and negative charge injection and optical illumination. Our results provide, for the first time, direct experimental evidence associating a specific point defect with the trapping phenomena in amorphous silicon nitride. We also demonstrate both directly and for the first time the amphoteric nature of the silicon nitride silicon-dangling-bond center. © 1988 The American Physical Society.
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999