Yi-Chia Chou, Mark C. Reuter, et al.
Microscopy and Microanalysis
Paper
Nanowire growth kinetics in aberration corrected environmental transmission electron microscopy
Abstract
We visualize atomic level dynamics during Si nanowire growth using aberration corrected environmental transmission electron microscopy, and compare with lower pressure results from ultra-high vacuum microscopy. We discuss the importance of higher pressure observations for understanding growth mechanisms and describe protocols to minimize effects of the higher pressure background gas.
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