D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
We report the fabrication of single-electron tunneling transistors consisting of a single nm-scale aluminum particle connected via tunnel junctions to two leads and capacitively coupled to a third gate electrode. We have used these devices to measure the spectra of discrete electronic quantum energy levels in the particle while tuning the number of electrons it contains. © 1996 Academic Press Limited.
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
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Physica A: Statistical Mechanics and its Applications
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
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