Wu Lu, Steven J. Koester, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
We use ultrahigh vacuum chemical vapor deposition to grow polycrystalline silicon carbide (SiC) on c-plane sapphire wafers, which are then annealed between 1250 and 1450°C in vacuum to create epitaxial multilayer graphene (MLG). Despite the surface roughness and small domain size of the polycrystalline SiC, a conformal MLG film is formed. By planarizing the SiC prior to graphene growth, a reduction in the Raman defect band is observed in the final MLG. The graphene formed on polished SiC films also demonstrates significantly more ordered layer-by-layer growth and increased carrier mobility for the same carrier density as the nonpolished samples. © 2011 American Institute of Physics.
Wu Lu, Steven J. Koester, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Y. Xie, Wanki Kim, et al.
Advanced Materials
Wenjuan Zhu, Vasili Perebeinos, et al.
ICSICT 2010
Yu Zhu, Sangbum Kim, et al.
ISTFA 2016