Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters
A field effect transistor device (FET), consisting of a nonlinear Mott Insulator channel material, and a high dielectric-constant gate oxide, is explored as a nanoscale device. Experimental functionality of a large scale prototype (5 μm channel length) has been demonstrated. The underlying physics of the device is analyzed and modeled using a time-dependent Hartree approach. Timing estimates suggest a relatively short switching time.
Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters
J.C. Marinace
JES
J. Tersoff
Applied Surface Science
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials