Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Far-ultraviolet radiation (e.g. 185 nm from a mercury resonance lamp or 193 nm from a pulsed excimer laser) is highly effective in modifying the surfaces of a variety of polymers because of its short penetration depth (< 3000 A ̊) and its high (>0.1) quantum yield for bond breaking. With continuous low-level irradiation at 185 nm in the presence of specific gases functional groups can be introduced on the surface while etching is kept at a low rate. In contrast, the pulsed laser radiation at 193 nm causes ablative photodecomposition leading to a surface showing negligible reaction with the surrounding atmosphere. This process can be conveniently used in controlled etching of polymers.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Mark W. Dowley
Solid State Communications
J.H. Stathis, R. Bolam, et al.
INFOS 2005
Michiel Sprik
Journal of Physics Condensed Matter