Growth and scaling of oxide conduction after breakdown
Barry P. Linder, James H. Stathis, et al.
IRPS 2003
We report a time-dependent clustering model for non-uniform dielectric breakdown. Its area scaling and low-percentile scaling properties are rigorously investigated. While at high percentiles non-uniform area scaling dominates, the model restores the weakest-link characteristics at low percentiles relevant for reliability projection. As a result, we develop a comprehensive methodology for the parameter extraction and projection methodology for non-uniform dielectric breakdown. Excellent agreement is obtained between the model and the experimental data of back-end-of-line low-k dielectrics and front-end-of-line gate dielectrics, suggesting a wide range of applications of this model in the field of dielectric breakdown reliability. © 2013 AIP Publishing LLC.
Barry P. Linder, James H. Stathis, et al.
IRPS 2003
Min Yang, Victor W.C. Chan, et al.
IEEE Transactions on Electron Devices
S. Siddiqui, M.M. Chowdhury, et al.
ECS Meeting 2013
Emmanuel Yashchin, Baozhen Li, et al.
IRPS 2012