A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Paper
Metastable phase formation in laser-processed Al-Ge sputtered thin films
Abstract
The formation of a metastable phase in Al59Ge41 thin films under microsecond laser irradiation is reported. Thin films prepared by co-sputtering are amorphous as-grown. Upon laser processing, amorphous and crystalline phases are detected and analysed using TEM and EDX. A metastable structure formed by laminar-textured aluminium alternating with an hexagonal metastable phase is observed. © 1987 Chapman and Hall Ltd.
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