Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
The growth of high-quality epitaxial CaSi2 films on Si(111) is described along with a determination of the silicide atomic structure and the structure of the CaSi2/Si interface. These films constitute the first example of an epitaxial non-transition-metal silicide. The lack of d electrons and the large difference in electronegativity between Ca and Si promise to endow epitaxial calcium silicide and the silicide-silicon interface with intriguingly different electronic properties from the thoroughly studied transition-metal silicides. © 1988 The American Physical Society.
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993