J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
Electrical resistivity measurements are reported for a variety of (V1-xTix)2O3 and V2(1-y)O3 systems, with 0≤x<0.06 and 0≤y<0.01, in the range 20-300 K. The metal-antiferromagnetic-insulator transition temperature TN diminishes steadily with increasing x and y and drops abruptly to zero at a critical concentration. The size of the discontinuity in electrical resistivity at TN diminishes with TN for the Ti-alloy system; for nonstoichiometric V2O3 it passes through a minimum and then rises significantly. These features can be rationalized almost quantitatively by assuming that acoustic lattice and ionized-impurity scattering processes govern the mobility of the itinerant charge carriers in the (V1-xTix)2O3 and V2(1-y)O3 systems, respectively. © 1983 The American Physical Society.
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
Imran Nasim, Melanie Weber
SCML 2024
T.N. Morgan
Semiconductor Science and Technology
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020