Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
We have investigated homoepitaxy on H terminated unreconstructed Si(111) at low temperatures. Epitaxy on the (1 × 1) surface requires growth temperatures about 80°C higher than on the bare surface to achieve similar crystal quality. Even at higher temperatures (300°C to 400°C), where excellent growth is expected, we observe a degradation in the surface ordering on the H terminated surface, not observed for growth on the bare surface. © 1995.
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
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