Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
We have investigated homoepitaxy on H terminated unreconstructed Si(111) at low temperatures. Epitaxy on the (1 × 1) surface requires growth temperatures about 80°C higher than on the bare surface to achieve similar crystal quality. Even at higher temperatures (300°C to 400°C), where excellent growth is expected, we observe a degradation in the surface ordering on the H terminated surface, not observed for growth on the bare surface. © 1995.
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules