William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Molecular beam sampling mass spectrometry combined with low-energy electron impact ionization has been used to detect and quantitate the stable molecules, ions, and silicon radicals created in the interaction of silane with a helium afterglow produced by a microwave discharge in pure helium. The observations are used to understand the afterglow chemistry and to elucidate some important features of the film growth mechanism in the remote plasma-enhanced chemical vapor deposition of silicon films. © 1995, American Vacuum Society. All rights reserved.
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Sung Ho Kim, Oun-Ho Park, et al.
Small
E. Burstein
Ferroelectrics
J.H. Stathis, R. Bolam, et al.
INFOS 2005