E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
We present luminescence experiments performed in InAsGaSb superlattices as a function of temperature. In addition to radiative recombination between the electron and hole ground subbands, the luminescence spectra exhibit a low-energy tail below 300 K, which leads us to consider simple theoretical models to account for impurities and interface defects in superlattices. © 1981.
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films