Low-power high-performance asymmetrical double-gate circuits using back-gate-controlled wide-tunable-range diode voltage

This paper presents a new power-reduction scheme using a back-gate-controlled asymmetrical double-gate device with robust data-retention capability for high-performance logic/SRAM power gating or variable/dynamic supply applications. The scheme reduces the transistor count, area, and capacitance in the header/footer device and provides a wide range of virtual ground (GND) or supply voltage. Physical analysis and numerical mix-mode device/circuit-simulation results confirm that the proposed scheme can be applied to low-power high-performance circuit applications in 65-nm technology node and beyond. Variable/dynamic supply or GND voltage using the proposed scheme improves read and write margins in scaled SRAM without degrading read and write performance. © 2007 IEEE.