Frank Stem
C R C Critical Reviews in Solid State Sciences
Low-frequency "1/f" noise is a major issue for nanoscale devices such at carbon nanotube transistors. We show that nanoscale ballistic transistors give voltage-dependent sensitivity to the intrinsic potential fluctuations from nearby charge traps. A distinctive dependence on gate voltage is predicted, without reference to the number of carriers. This dependence is confirmed by comparison with recent measurements of nanotube transistors. Possible ways of decreasing the noise are discussed. © 2007 American Chemical Society.
Frank Stem
C R C Critical Reviews in Solid State Sciences
T.N. Morgan
Semiconductor Science and Technology
A. Gangulee, F.M. D'Heurle
Thin Solid Films
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME