C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
The density of interface states at the epitaxial CaF2-Si(111) interface grown under UHV conditions at 700 °C is found to be much lower than assumed previously, as revealed from photoelectron spectroscopy. An upper limit is estimated to be 3 × 1012 cm-2 eV-1 near midgap, which comes close to values obtained for SiO2-Si interfaces.
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
Sung Ho Kim, Oun-Ho Park, et al.
Small
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics