Douglas M. Bishop, Talia S. Gershon, et al.
PVSC 2016
We present a device characterization study for hydrazine-processed kesterite Cu2 ZnSn (Se,S)4 (CZTSSe) solar cells with a focus on pinpointing the main loss mechanisms limiting device efficiency. Temperature-dependent study and time-resolved photoluminescence spectroscopy on these cells, in comparison to analogous studies on a reference Cu (In,Ga) (Se,S)2 (CIGS) cell, reveal strong recombination loss at the CZTSSe/CdS interface, very low minority-carrier lifetimes, and high series resistance that diverges at low temperature. These findings help identify the key areas for improvement of these CZTSSe cells in the quest for a high-performance indium- and tellurium-free solar cell. © 2010 American Institute of Physics.
Douglas M. Bishop, Talia S. Gershon, et al.
PVSC 2016
Min Yuan, David B. Mitzi
Dalton Transactions
Teodor K. Todorov, Kathleen B. Reuter, et al.
Advanced Materials
H.J. Kwee, Oki Gunawan, et al.
European Journal of Physics