L. Via, G.E.W. Bauer, et al.
Physical Review B
We report the first observation of long-range order in a semiconductor III-V ternary alloy. AlxGa1-xAs thin crystals grown by metal-organic chemical vapor deposition or molecular-beam epitaxy have Ga atoms preferentially occupying the 0,0,0 and 0 sites and Al atoms the ,0, and 0 sites in each unit cell. Our results indicate that this ordered structure is the equilibrium state of AlxGa1-xAs. © 1985 The American Physical Society.
L. Via, G.E.W. Bauer, et al.
Physical Review B
M.A. Tischler, H. Baratte, et al.
Journal of Crystal Growth
D.J. Wolford, G.D. Gilliland, et al.
Gallium Arsenide and Related Compounds 1991
L.S. Yu, L.C. Wang, et al.
Journal of Applied Physics