H.O. Beckmann, J.L. Whitten, et al.
JVSTA
Results of self-consistent energy-minimization calculations provide strong evidence that the ordered phases in epitaxially grown Ga1-xAlxAs and strained Si1-xGex alloys are metastable, in the sense that segregation into constituents is favored. We show that the long-range order in intermediate metastable structures leads to significant changes in the electronic properties of semiconductor superlattices. Segregation gives rise to micro-quantum-wells with staggered band lineup and multiple confined states in the potential barrier. © 1987 The American Physical Society.
H.O. Beckmann, J.L. Whitten, et al.
JVSTA
Inder P. Batra, Frank Herman
JVSTA
J.S. Nelson, Inder P. Batra
Physical Review B
S. Ciraci, Inder P. Batra
Physical Review B