G.M. Bancroft, T.K. Sham, et al.
JACS
Photoemission energy distributions for 20<~hν<~50eV for semiconducting FeS2 (fool's gold) show a narrow, ∼1 eV wide, localized uppermost valence level, whereas the corresponding levels of semiconducting NiS2 are broad (∼3.5 eV) and bandlike. Self-consistent-field Xα cluster calculations indicate that this level in FeS2 is the 3d-like t2g state, while in NiS2 the uppermost level is the more bandlike eg state, with t2g states about 2 eV lower that overlap the broad S 3p-derived valence bands. © 1974 The American Physical Society.
G.M. Bancroft, T.K. Sham, et al.
JACS
F.J. Himpsel, D.E. Eastman
Physical Review B
W.D. Grobman, R.A. Pollak, et al.
Physical Review Letters
M. Iwan, F.J. Himpsel, et al.
Physical Review Letters