R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
We describe the influence of local magnetization on electron localization in magnetic semiconductors. This includes a review of the magnetic field induced insulator-metal transition in Gd3-xvxS4 (where v=vacancy) and the observation of activated transport, i.e. a 'hard' gap, in the hopping regime for the diluted magnetic semiconductor Cd1-xMnxTe. © 1994.
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
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Physical Review B
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SPIE Advanced Lithography 2010
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