A. Portavoce, M. Kammler, et al.
Materials Science in Semiconductor Processing
The focused-ion-beam micropatterning was used for the lateral control of self-assembled Ge islands on Si(001). The selective growth was achieved without modifying the initial surface topography at low doses of 6000 Ga+ ions per <100 nm spot. The topographic effects produced by sputtering and redeposition controlled the selective nucleation sites at larger doses.
A. Portavoce, M. Kammler, et al.
Materials Science in Semiconductor Processing
S. Kodambaka, J. Tersoff, et al.
Microscopy and Microanalysis
A. Portavoce, M. Kammler, et al.
Nanotechnology
S. Kodambaka, J. Tersoff, et al.
Microscopy and Microanalysis