A. Davidson, A. Palevski, et al.
Applied Physics Letters
Josephson tunnel junctions have been fabricated incorporporating a thin layer of normal metal which is oxidized to form the tunnel barrier. The tunnel devices tested were of the form Nb/Al/Al2O3/Nb and several milliamperes of Josephson current were observed at 4.2°K. These samples have been found to have better defined tunneling characteristics than samples of the form Nb/NbOx/Nb. © 1972 The American Institute of Physics.
A. Davidson, A. Palevski, et al.
Applied Physics Letters
C.P. Umbach, S. Maekawa, et al.
Physical Review B
R.B. Laibowitz, E.I. Alessandrini, et al.
Physical Review B
A.D. Benoit, C.P. Umbach, et al.
Physical Review Letters