PaperIncreased range of Fermi-level stabilization energy at metal/melt-grown GaAs(100) interfacesS. Chang, I.M. Vitomirov, et al.Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
PaperTechnique for producing "good" GaAs solar cells using poor-quality substratesH.J. Hovel, J. WoodallApplied Physics Letters
PaperCross-sectional imaging and spectroscopy of GaAs doping superlattices by scanning tunneling microscopyR.M. Feenstra, E.T. Yu, et al.Applied Physics Letters
PaperComparative study of minority electron properties in p+-GaAs doped with beryllium and carbonM.L. Lovejoy, M.R. Melloch, et al.Applied Physics Letters