M.H. Brodsky, D. Kaplan, et al.
Applied Physics Letters
Optical and Hall effect measurements on thin film layers of polycrystalline IrSi1.75 show that this material is a semiconductor. The band gap is approximately 1.2 eV. The films obtained saturated with silicon were p-type with a charge carrier density of the order of 4×1017 cm -3.
M.H. Brodsky, D. Kaplan, et al.
Applied Physics Letters
P. Fiorini, I. Haller, et al.
Journal of Applied Physics
P. Chaudhari, S.R. Herd, et al.
Journal of Non-Crystalline Solids
P.J. Stiles, M.H. Brodsky
Solid State Communications