F.F. Morehead, B.L. Crowder, et al.
Journal of Applied Physics
Paper
Ion Implantation Doping of Si with 70 to 300 keV B. P. and As
Abstract
No abstract available.
Related
C.-Y. Ting, B.L. Crowder
JES
K.N. Tu, S.I. Tan, et al.
Applied Physics Letters
Conference paper
SUB-MICRON SILICON BIPOLAR TECHNOLOGY.
B.L. Crowder
ICCD 1985