Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The thermally activated inversion of Kr-Xe bilayers on Pd is studied with the use of photoemission and photon-excited Auger spectroscopy. Bilayers formed by the deposit of a monolayer or less of Xe on top of a monolayer of Kr on Pd at 49 K are shown to invert when the temperature is raised, with Xe coming in direct contact with the substrate. For a Pd(111) substrate the activation energy of this inversion process is determined: Ea=0.120.03 eV. © 1982 The American Physical Society.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
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Technical Digest-International Electron Devices Meeting
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