R. Ludeke, A. Koma
C R C Critical Reviews in Solid State Sciences
SHEED measurements have been made on the surface of GaAs crystals during in situ epitaxial deposition. The (bulk) spot pattern changes to a streak pattern as deposition proceeds, as noted by other workers. An interpretation of these patterns is given in terms of simple kinematic scatttering from flat surface regions. This leads to a straightforward interpretation of the observed specular reflection phenomenon, enables the area of coherent scattering to be estimated (0.16 μ2 in the present experiments), and should permit a more detailed analysis of ordered surface structures. © 1973 American Institute of Physics.
R. Ludeke, A. Koma
C R C Critical Reviews in Solid State Sciences
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