Fang-Shi J. Lai, L.K. Wang, et al.
IEEE T-ED
Indium has been used as an alternative channel implant in submicrometer channel Si MOSFET's, in order to obtain highly nonuniform channel doping. Superior device characteristics have been obtained down to L = 0.17-μm channel length. The device characteristics have been compared to uniform boron-implanted short-channel MOSFET's used in a 0.25-μm CMOS technology. Results indicate that nMOSFET's with nonuniform channel doping obtained by indium have superior short-channel effect (SCE) when compared to nMOSFET's with uniformly (boron) doped channel. © 1993 IEEE
Fang-Shi J. Lai, L.K. Wang, et al.
IEEE T-ED
Haizhou Yin, Z. Ren, et al.
VLSI Technology 2006
F. Assaderaghi, G. Shahidi, et al.
ICM 2000
M.M. Frank, V.K. Paruchuri, et al.
VLSI-TSA 2005