Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
We report a study of MOS capacitors having a dielectric of HfO2 and an interlayer of Si deposited in-situ, by MBE on GaAs surfaces prepared with various surface-reconstructions. Interface state densities of about 1 × 1012 eV-1cm-2 have been obtained. Capacitors on the Ga-rich surface, measured with peripheral illumination, show signs of a possible inversion layer. © 2007 Elsevier B.V. All rights reserved.
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
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Small
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MRS Spring 2000
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MRS Spring Meeting 1999