Guangrui Xia, Hasan M. Nayfeh, et al.
IEEE Transactions on Electron Devices
Lateral asymmetric channel doping is applied to 45-nm technology NFET devices. The measured effective draincurrent enhancement over coprocessed symmetric control devices is 10%. Analysis reveals that the dominant physical mechanism, which accounts for two-third of the total enhanced drain current, is an 8% increase in the source-side injection velocity. The remaining one-third is attributed to the decreased drain-induced barrier lowering. This paper concludes with an analysis of the switching characteristics of CMOS inverters composed of an asymmetric NFET and a companion symmetric PFET and shows a 5% improvement in the delay. The improvement is explained in terms of the increased velocity and 30% reduction in drain junction capacitance. © 2009 IEEE.
Guangrui Xia, Hasan M. Nayfeh, et al.
IEEE Transactions on Electron Devices
Scott Hanson, Bo Zhai, et al.
IBM J. Res. Dev
Hasan M. Nayfeh
RTP 2008
Qiqing Ouyang, Min Yang, et al.
VLSI Technology 2005