N.V. Medhekar, V.B. Shenoy, et al.
Applied Physics Letters
We have used hot electrons emitted into vacuum from biased metal-oxide-semiconductor (MOS) structures to form a direct image of the spatial emission distribution. Hot-electron emission microscopy allows us to investigate the emission characteristics of biased MOS structures and its correlation with morphology, as well as time-dependent prebreakdown phenomena at high spatial resolution(∼20 nm). We show that different oxide structures have very different emission, as well as prebreakdown characteristics. © 1996 The American Physical Society.
N.V. Medhekar, V.B. Shenoy, et al.
Applied Physics Letters
M.C. Reuter, R.M. Tromp
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
M. Copel, P.R. Duncombe, et al.
Applied Physics Letters
M. Horn-Von Hoegen, J. Falta, et al.
Applied Physics Letters