PaperComparative study of minority electron properties in p+-GaAs doped with beryllium and carbonM.L. Lovejoy, M.R. Melloch, et al.Applied Physics Letters
Conference paperInAs bipolar transistors: A path to high-performance cryogenic electronicsP.E. Dodd, M.R. Melloch, et al.Device Research Conference 1993
PaperGaAs buffer layers grown at low substrate temperatures using As2 and the formation of arsenic precipitatesM.R. Melloch, K. Mahalingam, et al.Journal of Crystal Growth
PaperV-6 A Method for the Prevention of the Formation of Dark-Line and Dark-Spot Defects in GaAlAs Double Heterostructure LasersJ.A. Van Vechten, J.M. Blum, et al.IEEE T-ED
