PaperLandau-level broadening and scattering time in modulation doped GaAs/AlGaAs heterostructuresF. Fang, T.P. Smith III, et al.Surface Science
PaperDevice innovation and material challenges at the limits of CMOS technologyP. SolomonAnnual Review of Materials Science
PaperInert gas reactive ion etching damage to GaAs using inverted heterojunctionsC.M. Knoedler, L. Osterling, et al.Journal of Applied Physics
PaperRemote phonon scattering in field-effect transistors with a high κ insulating layerB. Laikhtman, P. SolomonJournal of Applied Physics
