PaperA low-temperature insulating phase at v = 1.5 for 2D holes in high-mobility Si-Si1-xGex heterostructures with Landau level degeneracyR.B. Dunford, E.E. Mitchell, et al.Journal of Physics Condensed Matter
PaperNonequilibrium boron doping effects in low-temperature epitaxial silicon filmsB.S. Meyerson, F. Legoues, et al.Applied Physics Letters
PaperElectron resonant tunneling in Si/SiGe double barrier diodesK. Ismail, B.S. Meyerson, et al.Applied Physics Letters
Conference paperIN SITU DOPED SILICON VIA LPCVD: INTERACTIONS OF THE DOPANT/SILANE/SILICON SURFACE SYSTEM.B.S. Meyerson, M.L. YuECS Meeting 1983
