Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Paper
Hot-electron dynamics in SiO2 and the degradation of the Si/SiO2-interface
Abstract
Monte Carlo transport simulations are used to calculate the interface-state buildup at the Si/SiO2-interface during high-field current stress using a hot-electron-induced hydrogen-release model. © 1993.
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