Hot-electron dynamics in SiO2 and the degradation of the Si/SiO2-interface

E. Cartier; D.J. DiMaria

doi:10.1016/0167-9317(93)90158-2

Microelectronic Engineering

Paper

01 Jan 1993

Hot-electron dynamics in SiO₂ and the degradation of the Si/SiO₂-interface

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Abstract

Monte Carlo transport simulations are used to calculate the interface-state buildup at the Si/SiO2-interface during high-field current stress using a hot-electron-induced hydrogen-release model. © 1993.

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