Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
A new method is described for rapid and accurate calculation of the time evolution of non-equilibrium electron distributions by application of high-order integration procedures directly to the Boltzmann equation in a transformed and discretized representation. The method has been checked for a soluble model and detailed results are given for a model of p-Ge. © 1971.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
J.H. Stathis, R. Bolam, et al.
INFOS 2005
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications