Conference paper
Low temperature 12 ns DRAM
W.H. Henkels, N.C.-C. Lu, et al.
VLSI-TSA 1989
It is demonstrated that the drain current overshoot in partially depleted SOI MOSFET's has a significant history dependence or memory effect, even in the absence of impact ionization under low drain biases. The measured output characteristics of partially depleted SOI MOSFET's are shown to be dynamically dependent on their switching history, frequency, and bias conditions due to the finite time constants of carrier generation (thermal or impact ionization) and recombination in the floating body.
W.H. Henkels, N.C.-C. Lu, et al.
VLSI-TSA 1989
J.N. Burghartz, J.D. Cressler, et al.
ESSDERC 1991
Keith A. Jenkins, Y. Taur, et al.
IEEE International SOI Conference 1996
Keith A. Jenkins, J.Y.-C. Sun, et al.
IEEE Transactions on Electron Devices