Bonding, interfacial effects and adhesion in dlc
A. Grill, B.S. Meyerson, et al.
Proceedings of SPIE 1989
We report on the fabrication and the resultant device characteristics of the first 0.25-μm gate-length field-effect transistor based on n-type modulation-doped Si/SiGe. Prepared employing ultrahigh vacuum/chemical vapor deposition (UHV/CVD), the mobility and electron sheet charge density in the strained Si channel are 1500 (9500) cm2/V s and 2.5 x 1012 (1.5 x 1012) cm-2 at 300 K (77 K). At 77 K, the devices have a current and transconductance of 325 mA/mm and 600 mS/mm, respectively. These values far exceed those found in Si MESFET's and are comparable to the best results achieved in GaAs/AlGaAs modulation-doped transistors. © 1992 IEEE
A. Grill, B.S. Meyerson, et al.
Proceedings of SPIE 1989
G.L. Patton, J.M.C. Stork, et al.
IEDM 1990
E. Kratschmer, H.S. Kim, et al.
IVMC 1995
I. Adesida, M. Arafa, et al.
Microelectronic Engineering