W.L. Prater, E.L. Allen, et al.
Journal of Applied Physics
Thin-film diodes 0.2-4×10-5cm2 in size were fabricated on Al2O3-TiC ceramic substrates from junctions between p-type NiOx and n-type ITOx thin films sputter deposited at ambient temperature. These diodes show a room-temperature turn-on voltage of 0.3-0.6 V and a dc forward current density exceeding 104A/cm2 at an applied voltage of ≃1.5V. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of these diodes can be described by an exponential dependence of I on the applied V and by a linear I/C2 dependence on the reverse applied V, respectively, consistent with those predicted by the various models proposed for the mechanisms for charge-carrier transport in abrupt anisotype heterojunctions. The ideality factor at low-applied V (≤0.3V), the junction built-in potential, and the carrier concentration deduced from these I-V and C-V data are ≃1.5-2, 0.20-0.24 V, and 1.90-1.97×1018/cm3, respectively. © 1998 American Institute of Physics.
W.L. Prater, E.L. Allen, et al.
Journal of Applied Physics
R. Hsiao, D. Mauri
Applied Surface Science
J.H. Kim, K. Char, et al.
Applied Physics Letters
J.S. Martens, V.M. Hietala, et al.
Journal of Applied Physics