J.-M.L. Beaujour, W. Chen, et al.
Journal of Applied Physics
For CoFeBMgO -based magnetic tunnel junctions, the switching probability has an unusual dependence on bias voltage V and bias magnetic field H for bias voltage pulse durations t long enough to allow thermally activated reversal. At high junction bias close to 1 V, the probability of magnetic switching in spin-torque-driven switches sometimes appears to decrease. This is shown to be due to a backhopping behavior occurring at high bias, and it is asymmetric in bias voltage, being more pronounced in the bias direction for antiparallel-to-parallel spin-torque switch, i.e., in the direction of electrons tunneling into the free layer. This asymmetry hints at processes involving hot electrons within the free-layer nanomagnet. © 2009 American Institute of Physics.
J.-M.L. Beaujour, W. Chen, et al.
Journal of Applied Physics
B. Özyilmaz, A.D. Kent, et al.
Physical Review Letters
J.S. Noh, T.K. Nath, et al.
Materials Research Society Symposium-Proceedings
D.C. Worledge, G. Hu, et al.
Applied Physics Letters