P. Fumagalli, R.J. Gambino, et al.
Applied Physics Letters
U1-xSbx amorphous ferromagnets were prepared that show a magnetoresistance anisotropy (AMR) reaching 26% at 10 K, in a 50 kOe field. This is a striking result, since the AMR of typical amorphous ferromagnets does not exceed 1%. Large excess resistivity caused by domain walls is found to scale with 2, where is the tangent of the Hall angle. © 1990 The American Physical Society.
P. Fumagalli, R.J. Gambino, et al.
Applied Physics Letters
P. Freitas, T.S. Plaskett
Physical Review B
Gerald Burns, F.H. Dacol, et al.
Solid State Communications
J.W. Matthews, T.S. Plaskett, et al.
Journal of Crystal Growth