S.K. Kang, S. Purushothaman
Journal of Electronic Materials
We find experimentally and calculate by a numerical method the geometrical contribution to resistance due to current bending and constriction in 4-point contact resistance measurements in two configurations: 2I (cross stripes) and 2L. The geometrical effects in thin film couples increase in a 2I and decrease in a 2L with decreasing film thickness/width ratios, rendering the 2L configuration most suitable for interface resistance studies, particularly when the thickness to width ratios are less than 0.5. A set of scaling equations is provided, which enables the application of our results to predict geometrical contributions in these geometries for different materials and dimensions.
S.K. Kang, S. Purushothaman
Journal of Electronic Materials
S. Purushothaman, S.V. Nitta, et al.
Technical Digest-International Electron Devices Meeting
B.K. Furman, H.M. Clearfield, et al.
International Conference on Polyimides 1991
C. Narayan, S. Purushothaman
IEMT 1993